p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 1 6 00 v n - c hannel mosfet v oltage 6 0 0 v c urrent 2 a ito - 220ab - f to - 220ab to - 252 to - 251ab f eatures ? r ds(on) , v gs @10v,i d @ 1 a < 4.4 ? high switching speed ? improv ed dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : to - 251ab ,to - 252 , to - 220 ab , ito - 220ab - f p ackage ? terminals : solderable per mil - std - 750, method 2026 ? to - 251ab approx. weight : 0.0104 ounces, 0.297grams ? to - 252 approx. weight : 0.0104 ounces, 0.297grams ? to - 220ab approx. weight : 0.06 7 ounces, 2 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251ab to - 220ab ito - 220ab - f to - 252 units drain - source voltage v ds 600 v gate - source voltage v gs + 30 v continuous drain current i d 2 a pulse d drain current i dm 8 a single pulse avalanche energy (note 1 ) e as 115 mj power dissipation t c =25 o c p d 34 44 23 34 w derate above 25 o c 0.2 7 0.35 0.18 0.27 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal r esistance - junction to case - j unction to ambient r jc ja 3.67 110 2.84 62.5 5.43 120 3.67 110 o c /w ? limited only by maximum junction temperature
p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min . typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 6 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3. 2 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 1 a - 4 4. 4 zero gate voltage drain current i dss v d s = 6 00v,v gs =0v - 0.0 2 1 .0 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 2 a,v gs =0v - 0.8 6 1.4 v dynamic (note 4 ) total gate charge q g v ds = 480 v, i d = 2 a, v gs =10v (note 2,3 ) - 5.7 - nc gate - source charge q gs - 1.8 - gate - drain charge q gd - 2 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 257 - pf output capacitance coss - 3 9.7 - reverse transfer capacitance crss - 0.92 - turn - on delay time td (on) v dd = 300 v, i d = 2 a, r g = 25 (note 2,3 ) - 10 - ns turn - on rise time t r - 24 - turn - off delay time td (off) - 16 - turn - off fall time t f - 21 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 2 a maximum pulsed drain - source diode forwa rd current i sm --- - - 8 a reverse recovery time trr v gs =0v, i s = 2 a di f / dt=100a/us (note 2 ) - 357 - ns reverse recovery charge qrr - 2 - uc notes : 1. l=30mh, i as =2.7 a, v dd = 50 v, r g = 2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially inde pendent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized transient thermal impedance vs. pulse width fig. 14 pjp 2 na 6 0 normalized transient thermal impedance vs. pulse width fig. 15 pjf 2 na6 0 normalized transient thermal impedance vs. pulse width
p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 6 packaging information . ito - 2 20ab - f dimension u nit: mm to - 220 ab dimension u nit: mm to - 252 dimension u nit: mm to - 251ab dimension u nit: mm
p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj u2na6 0_t0_00001 t o - 2 51ab 80pcs / tube u2na6 0 halogen free pjd2na6 0 _l2_00001 to - 252 3,000pcs / 13 reel d2na6 0 halogen free pj p2na6 0_t0_00001 to - 220 ab 50pcs / tube p2na6 0 halogen free pj f2na6 0_t0_00001 ito - 220ab - f 50pcs / tube f2na6 0 halogen free
p p j u 2 na6 0 / pj d 2 na 6 0 / pj p 2 na 6 0 / pj f 2 na6 0 march 10,2014 - rev.00 page 8 disclaimer
|
